X-Band High Power Amplifier with 8.5-11.5GHz Frequency Range and 25W Output Power | UMS

2021-02-06 UMS
GaN HPA,X-Band High Power Amplifier,CHA8212-99F,GaN HPA

UMS published a very versatile new GaN HPA. The CHA8212-99F is a 8.5-11.5GHz 25W output power X-Band High Power Amplifier. It features a 44dBm Pout with a high PAE of 36% at Psat (@Pin=20dBm). This circuit is supplied in bare die.

The CHA8212-99F is dedicated to defence applications and a wide range of microwave applications and systems. This circuit is manufactured on a UMS proprietary 0.25µm gate length GaN pHEMT process.

Main features:

· Frequency range: 8.5-11.5GHz

· Linear Gain: 34dB over 3 stage

· Pout: 44dBm Pout @ 20dBm Pin

· PAE: 36% PAE @ 20dBm Pin

· DC bias: 28V @ 0.84A

· Bare die product


Output Power versus Input Power:


Output Return Loss versus Frequency:


Input Return Loss versus Frequency:

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