Infrared Emitting Diode, 950 nm, GaAs TSUS5200, TSUS5201, TSUS5202

2022-06-09

●TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.
●FEATURES
■Package type: leaded
■ Package form: T-1¾
■ Dimensions (in mm): Ø 5
■ Leads with stand-off
■Peak wavelength: λ-p = 950 nm
■High reliability
■Angle of half intensity: ϕ = ± 15°
■ Low forward voltage
■ Suitable for high pulse current operation
■ Good spectral matching with Si photodetectors
■ Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Vishay

TSUS5200TSUS5201TSUS5202

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Part#

Infrared Emitting Diode

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Infrared remote control ]free air transmission systems ]transmissive sensors ]reflective sensors ]

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Datasheet

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Please see the document for details

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English Chinese Chinese and English Japanese

24-Aug-11

Rev. 2.3

81055

219 KB

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