1N5711 Silicon Rectifier Diode Schottky, RF Switch DO−35 Type Package
●Description:
■The 1N5711 is a metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.This device is primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range.
[ high level UHF ][ high level VHF ] |
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
DO−35 |
|
English Chinese Chinese and English Japanese |
|
2017/12/26 |
|
|
|
|
|
96 KB |
- +1 Like
- Add to Favorites
Recommend
- Link-PP Launched 2.5G 5G 10G and other high-rate 10 Gigabit Network Transformers
- Aeonsemi Unveils ChronoPHY™ Series of Multi-Rate 10G Ethernet PHYs Ethernet Transceivers, Integrating SyncE Jitter Filtering PLL Function
- EFR32BG22 Wireless SoC Enables IoT Devices to Operate 10+ Years on 1 Conin Cell Battery | Silicon Labs
- Radiation-resistant Optical Transceivers with Ultra-low Bit Error Rates of 10-9 | Smiths Interconnect
- Atex-ready Plug & Play Solution for Process Analytical Technology (PAT)
- GaN Transistor for Several Power Applications
- MASWELL newly launched GNSS Planar Antenna AN.GNSS.L1.PCB with a low axial ratio covering the 1.56-1.602GHz Global Positioning frequency bands L1
- Renesas RX Becomes World‘s First General-Purpose MCU to Obtain CMVP Level 3 Certification Under NIST FIPS 140-2
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.