1N5711 Silicon Rectifier Diode Schottky, RF Switch DO−35 Type Package

2022-10-27

●Description:
■The 1N5711 is a metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.This device is primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range.

NTE

1N5711

More

Part#

Silicon Rectifier Diodesilicon junction diode

More

high level UHF ]high level VHF ]

More

Datasheet

More

More

Please see the document for details

More

More

DO−35

English Chinese Chinese and English Japanese

2017/12/26

96 KB

- The full preview is over,the data is 2 pages -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: