2N3906SC EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA
●FEATURES:
■Low Leakage Current: I-CEX=-50nA(Max.), I-BL=-50nA(Max.)@V-CE=-30V, V-EB=-3V.
■Excellent DC Current Gain Linearity.
■Low Saturation Voltage : V-CE(sat)=-0.4V(Max.) @I-C=-50mA, I-B=-5mA.
■Complementary to 2N3904SC.
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2015. 5. 12 |
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Revision No : 0 |
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751 KB |
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