2N3906S EPITAXIAL PLANAR PNP TRANSISTOR
■Low Leakage Current: I-CEX=-50nA(Max.), I-BL=-50nA(Max.) @V-CE=-30V, VEB=-3V.
■Excellent DC Current Gain Linearity.
■Low Saturation Voltage: V-CE(satr-0.4V(Max.) @I-C=-50mA, I-B=-5mA.
■Low Collector Output Capacitance: Cob=4.5pF(Max.) @V-CB=-5V.
■Complementary to 2N3904S.
■Suffix U:
▲Qualified to AEC-Q101.
▲ex) 2N3906S-RTK/HU
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2020. 02. 10 |
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Revision No: 4 |
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55 KB |
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