SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR 2N3906U TECHNICAL DATA

2022-06-17

●FEATURES
■Low Leakage Current: I-CEX=-50nA(Max.), I-BL=-50nA(Max.) @ V-CE=-30V, V-EB=-3V.
■Excellent DC Current Gain Linearity.
■Low Saturation Voltage: V-CE(sat)=-0.4V(Max.) @ I-C=-50mA, I-B=-5mA.
■Low Collector Output Capacitance: C-ob=4.5pF(Max.) @ V-CB=-5V.
■Complementary to 2N3904U.

KEC

2N3906U2N3904U

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EPITAXIAL PLANAR PNP TRANSISTOR

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Datasheet

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USM

English Chinese Chinese and English Japanese

2008. 8. 29

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