HY62CT08081E Series 32Kx8bit CMOS SRAM
●DESCRIPTION
■The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
●FEATURES
■Fully static operation and Tri-state output
■TTL compatible inputs and outputs
■Low power consumption
■Battery backup
◆2.0V(min.) data retention
■Standard pin configuration
◆28 pin 600mil PDIP
◆28 pin 330mil SOP
◆28 pin 8x13.4 mm TSOP-I (Standard)
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HY62CT08081E 、 HY62CT08081E-C 、 HY62CT08081E-E 、 HY62CT08081E-I 、 HY62CT08081E-DPC 、 HY62CT08081E-DPE 、 HY62CT08081E-DPI 、 HY62CT08081E-DGC 、 HY62CT08081E-DGE 、 HY62CT08081E-DGI 、 HY62CT08081E-DTC 、 HY62CT08081E-DTE 、 HY62CT08081E-DTI 、 HY62CT081E |
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Datasheet |
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Please see the document for details |
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TSOP-I(Standard);PDIP;SOP |
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English Chinese Chinese and English Japanese |
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Apr.2001 |
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Rev 04 |
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418 KB |
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