HY62WT08081E Series 32Kx8bit CMOS SRAM

2022-09-14

●DESCRIPTION
■The HY62WT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
●FEATURES
■Fully static operation and Tri-state output
■TTL compatible inputs and outputs
■Low power consumption
■Battery backup (LL-part)
◆2.0V(min.) data retention
■Standard pin configuration
◆28 pin 600mil PDIP
◆28 pin 330mil SOP
◆28 pin 8x13.4 mm TSOP-I (Standard)

SK HYNIX

HY62WT08081EHY62WT08081E-CHY62WT08081E-EHY62WT08081E-IHY62WT08081E-DPCHY62WT08081E-DPEHY62WT08081E-DPIHY62WT08081E-DGCHY62WT08081E-DGEHY62WT08081E-DGIHY62WT08081E-DTCHY62WT08081E-DTEHY62WT08081E-DTIHY62WT081E

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Part#

32K x 8bit CMOS SRAM

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low voltage operation and battery back-up application ]

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Datasheet

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Please see the document for details

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PDIP;SOP;TSOP-I

English Chinese Chinese and English Japanese

May .2001

Rev 04

453 KB

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