EAS GaNAMP1002 Class-D High-Performance eGaN FET Amplifier Module Product Brief
●The Module is designed with best-practices EMI considerations, and for compliance with FCC, UL, CSA and CE requirements.
●EAS™ eGaNAMP1002
■Complete Stand-alone Class-D Amplifier Module
■400 watts/channel, 8 ohms
■< 0.05% THD+N, > 105dB SNR
■Differential/Balanced Analog Input
■Dual Half-Bridge or Single Bridge-Tied-Load (BTL) Topology for Ground-Referenced Output
■Integrated, non-intrusive over-current, short-circuit and over-voltage protection
Class-D High-Performance eGaN FET Amplifier Module 、 self-contained 100 watts per channel Class-D Amplifier Module |
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[ Powered Loudspeakers ][ Multi-Channel Amplifiers ][ stand-alone Stereo ][ Single-Channel applications ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2020/11/10 |
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977 KB |
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