WMS140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET
● WMS140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.
■Features
● VDS = 65V, I D = 10A
● RDS(on) < 18mΩ @ VGS = 10V
● RDS(on) < 23.5mΩ @ VGS = 4.5V
● Green Device Available
● 100% EAS Guaranteed
● Low Gate Charge
● High Speed Switching
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[ high efficiency fast switching applications ][ Power Management Switches ][ DC/DC Converter ] |
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Datasheet |
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Please see the document for details |
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SOP-8L |
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English Chinese Chinese and English Japanese |
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2023/9/7 |
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Rev.1.0 |
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W0803944 |
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1 MB |
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