WMS140DN06LG2 60V Dual N-Channel Enhancement Mode Power MOSFET
■WMS140DN06LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.
●Features
■VDS = 60V, ID = 10A
▲RDS(on) < 18mΩ @ VGS = 10V
▲RDS(on) < 24mΩ @ VGS = 4.5V
■Low Gate Charge
■100% EAS Guaranteed
■RoHS and Halogen-Free Compliant
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Datasheet |
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Please see the document for details |
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SOP-8L |
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English Chinese Chinese and English Japanese |
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2022/7/13 |
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Rev.1.0 |
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W0803691 |
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1 MB |
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