EPC9067 Development Board Quick Start Guide: EPC8009 65 V Half Bridge with Sync FET Bootstrap Gate Drive
■The EPC9067 development board is a 65 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives, featuring the EPC8009 enhancement mode (eGaN®) field effect transistor (FET). The gate driver has been configured with a synchronous FET bootstrap circuit featuring the EPC2038 eGaN FET that eliminates high side device losses induced by the reverse recovery losses of the internal bootstrap diode of the gate driver. The purpose of this development board is to simplify the evaluation process of the EPC8009 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter. The inclusion of the synchronous FET bootstrap circuit enables significant increase in operating frequency capability of the half bridge circuit.
■The EPC9067 development board is 2” x 1.5” and has two EPC8009 eGaN FETs in a half bridge configuration using Texas Instruments LM5113 gate driver with supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. The board includes pads for the inclusion of customer components to facilitate testing in a Buck converter or ZVS class-D amplifier configurations.
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Development Board 、 enhancement mode (eGaN®) field effect transistor 、 FET 、 eGaN FETs |
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User's Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2023/7/13 |
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822 KB |
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