Circuit Simulation Using EPC Device Models

PublishTime：2023-08-25

●EPC’s enhancement mode gallium nitride (eGaN®) power transistors are a new generation of power switches offering unsurpassed performance over silicon power MOSFETs in switching speed and conduction losses with superior thermal characteristics. An accurate circuit and device model is a valuable tool for developing new topologies, building successful designs, and shortening time to market. This article describes the status and use of EPC device models, and illustrates some important considerations when incorporating EPC eGaN devices into a circuit model.
●Status of current models: Years of refinement have gone into the development of silicon power MOSFET device models. Early attempts were based on a fitting of device behavior with functions of the approximate shape, polynomials of many orders, or simple look-up tables. Recent trends have been toward solving multidimensional electrostatic conditions from the basic underlying physics - a daunting task - but great simplification in the final solution has been achieved using this approach. Only a few papers have been published on the development of spice models for GaN. In addition, GaN has many new properties, such as spontaneous and piezo-electric polarization, that have only recently begun to be incorporated into physics based models. EPC V091 models presented in this paper, are a hybrid of physics-based and phenomenological functions to achieve a compact spice model with acceptable simulation and convergence characteristics. Temperature effects have also been included for conductivity and threshold parameters. Although quantum-based effects have not been incorporated, the models accurately reproduce the basic response of the devices under circuit operation conditions. A number of improvements are under development to include field dependent mobility and gate injection current.

Brand of Product：	EPC
Part#：	EPC1001 、 EPC860 、 EPC2015 、 EPC2001 、 EPC199 More Part#
Product Category：	enhancement mode gallium nitride power transistors 、 eGaN® power transistors 、 eGaN power transistors 、 GaN Power Transistor 、 power switches More
Application：	[ RF applications ] More
Data Type：	Application note & Design Guide More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2019/12/20
Version Number：
Data Encoding：	AN005
Data Size：	1.1 MB

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