V8PM10S Vishay General Semiconductor High Current Density Surface MountTrench MOS Barrier Schottky Rectifier

2022-06-21

●FEATURES
■Very low profile - typical height of 1.1 mm
■ Ideal for automated placement
■Trench MOS Schottky technology
■Low forward voltage drop, low power losses
■High efficiency operation
■Meets MSL level 1, per J-STD-020,LF maximum peak of 260 °C
■AEC-Q101 qualified available
▲Automotive ordering code; base P/NHM3

Vishay

V8PM10SV8PM10S-M3/HV8PM10S-M3/IV8PM10SHM3/HV8PM10SHM3/I

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Part#

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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low voltage high frequency inverters ]DC/DC converters ]

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Datasheet

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Please see the document for details

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TO-277A

English Chinese Chinese and English Japanese

27-Feb-17

Revision: 27-Feb-17

87532

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