V8PM10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
●FEATURES
■ Very low profile - typical height of 1.1 mm
■ Ideal for automated placement
■ Trench MOS Schottky technology
■Low forward voltage drop, low power losses
■High efficiency operation
■Meets MSL level 1, per J-STD-020,LF maximum peak of 260 °C
■AEC-Q101 qualified available
▲Automotive ordering code; base P/NHM3
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V8PM10 、 TMBS 、 eSMP 、 V8PM10-M3/H 、 V8PM10-M3/I 、 V8PM10HM3/H 、 V8PM10HM3 |
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High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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[ low voltage high frequency inverters ][ DC/DC converters ] |
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Datasheet |
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Please see the document for details |
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TO-277A |
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English Chinese Chinese and English Japanese |
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03-Jul-15 |
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Revision: 03-Jul-15 |
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87620 |
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151 KB |
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