SiC Schottky Barrier Diode For the Excellence in System Design

2023-06-08
●Features
■Temperature independent switching
■Low conduction losses
■High surge current capability
■High ruggedness
■High junction temperature 175°C

PANJIT

PCDD0465G1PCDC0465G1PCDD0665G1PCDC0665G1PCDD0865G1PCDC0865G1PCDD1065G1PCDC1065G1PCDD05120G1PCDC05120G1PCDD08120G1PCDC08120G1PCDD10120G1PCDC10120G1PCDB0465G1PCDE0465G1PCDB0665G1PCDE0665G1PCDB0865G1PCDE0865G1PCDB1065G1PCDE1065G1PCDB10120G1PCDE10120G1PCDB20120G1PCDE20120G1PCDP0465G1PCDP0665G1PCDP0865G1PCDP1065G1PCDP1265G1PCDP1665G1PCDP2065G1PCDP05120G1PCDP08120G1PCDP10120G1PCDP15120G1PCDP20120G1PCDH20120G1PCDH2065CCG1PCDH2065CCG1-AUPCDH3065CCG1PCDH3065CCG1-AUPCDH4065CCG1PCDH4065CCG1-AUPCDH20120CCG1PCDH20120CCG1-AUPCDH30120CCG1PCDH30120CCG1-AUPCDH40120CCG1PCDH40120CCG1-AU

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Part#

SiC Schottky Barrier DiodeSiC Diode

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Power System ]Green Energy ]Consumer ]Industrial ]Server Power ]Telecom Power ]PC Power ]PV Inverter ]ESS ]BMS ]EV Charging Pile ]UPS ]Industrial Motor ]Home Appliance ]Digital TV ]

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Datasheet

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Please see the document for details

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TO-252AA;TO-263;TO-220AC;TO-247AD-2LD;TO-247AD-3LD

English Chinese Chinese and English Japanese

Mar. 2023

REV.07

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