PANJIT‘s Latest 30V&40V Automotive-Grade MOSFETs with a High 175℃ Junction Temperature
PANJIT introduces new P-channel and N-channel MOSFETs designed to boost automotive electronic systems. The P-channel MOSFETs, with AEC-Q101 qualification and a high 175℃ junction temperature, offer optimal choices for design engineers seeking reliability and simplified circuitry. These MOSFETs, minimizing RDS(ON) and maximizing avalanche ruggedness, are available in flexible packages (DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, TO-263, and TO-263-7L).
PANJIT's N-channel power MOSFETs employ advanced trench technology, delivering excellent figure of merit (FOM), lower RDS(ON), and capacitance. Available in low-profile packages (DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA), these MOSFETs contribute to efficient and reliable PCB layouts.
By combining innovation with reliability, PANJIT's low voltage MOSFETs simplify power design circuitry, addressing the evolving needs of automotive design engineers. These components are a testament to PANJIT's commitment to shaping the future of automotive electronics, offering optimal solutions for high-performance automotive applications.
Key Features of 30V & 40V Automotive-Grade P-Channel MOSFET:
P-channel enhancement mode logic level MOSFETs
Low RDS(ON) to minimize conduction losses
Package with low thermal resistance
100% unclamped inductive switching (UIS) tested
Electrostatic sensitive device (ESD) capable
AEC-Q101 qualified and PPAP capable
175°C operating junction temperature
Available in TO-263-7L Package
Key Features of 30V & 40V Automotive-Grade N-Channel MOSFET:
30V & 40V N-channel advanced trench
Low RDS(ON) to minimize conduction losses
Low FOM to minimize driver losses
Standard and logic levels available
AEC-Q101 qualified and PPAP capable
175°C operating junction temperature
30V & 40V Automotive-Grade P-Channel MOSFET List
30V & 40V Automotive-Grade N-Channel MOSFET List
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