PANJIT SiC Schottky Barrier Diode Electrical Characteristics

PublishTime：2021-12-22

Silicon Carbide (SiC) is one ofthewide-band gap materials widely used in power semiconductor devices. Since this material can overcome the performance limitation caused by silicon substrate-material, most power semiconductor companies have already developed SiC material based power devices. Silicon (Si) based power diode with PiN structure was good enough to be used under 40kHz switching frequency as a function of freewheeling diode solution in the hard switching applications, however, in order to get higher power density, increasing switching frequency is trending in power conversion system design. Due to the system design trend, power conversion system designers are willing to accept higher efficiency device solutions. One of thekey requirements to achieve a higher frequency system is to reduce the switching loss caused by the freewheeling diode reverse recovery current. Therefore, Schottky Barrier Diode (SBD) can be the solution to gain the lowest switching power loss as operating as freewheeling diode due to no reverse recovery current characteristic. However, it is unrealistic to develop silicon base Schottky Barrier Diode (SBD) exceeding 200V since the high leakage current is one of the drawback; SiC substrate material has a superior characteristic of low leakage current at high breakdown voltage area, so it is perfect to be the material of the SBD that needs to exceed 600V. Recently, PANJIT has released the 1st generation 650V and 1200V SiC Schottky Barrier Diode (SBD) to support high-end power conversion system designs with higher switching frequencies and bigger power densities. PANJIT SiC Schottky Barrier Diode (SBD) Gen.1 line-up is shown on Table 1 to support various system power rating solutions.

Brand of Product：	PANJIT
Part#：	PCDP0465G1 、 PCDP0665G1 、 PCDP0865G1 、 PCDP1065G1 、 PCDP10120G1 、 PCDP15120G1 、 PCDP20120G1 、 PCDP05120G1 、 PCDP08120G1 、 PCDP1265G1 、 PCDP1665G1 、 PCDP2065G1 、 PCDB0465G1 、 PCDE0465G1 、 PCDB0665G1 、 PCDE0665G1 、 PCDB0865G1 、 PCDE0865G1 、 PCDB1065G1 、 PCDE1065G1 、 PCDB10120G1 、 PCDE10120G1 、 PCDB20120G1 、 PCDE20120G1 、 PCDD0465G1 、 PCDD0665G1 、 PCDD0865G1 、 PCDD1065G1 、 PCDD10120G1 、 PCDD05120G1 、 PCDD08120G1 More Part#
Product Category：	SiC Schottky Barrier Diode More
Application：	More
Data Type：	Application note & Design Guide More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220AC;TO-263;TO-252AA
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/10/19
Version Number：	Rev.02
Data Encoding：	AN-PJ1002
Data Size：	2.3 MB

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