www.panjit.com
SiC Schottky Barrier Diode
For the Excellence in System Design
• Temperature independent switching
• Low conduction losses
• High surge current capability
• High ruggedness
• High junction temperature 175°C
Mar. 2023-REV.07
Features
Target Application
• PV Inverter
• ESS / BMS
• Server Power
• Telecom Power
• PC Power
• EV Charging Pile
• UPS
• Industrial Motor
• Home Appliance
• Digital TV
Power System Green Energy ConsumerIndustrial
Circuit SiC Diode Device Rating Package
Boost PFC
• 650V / 4A -40A
• 1200V / 5A -40A
• TO-252AA
• TO-263
• TO-220AC
• TO-247AD-2LD
• TO-247AD-3LD
Boost Converter
Bridgeless PFC
Vienna PFC
SiC DiodeFRED
No change at high temperature
Headquarters No.24, Gangshan N. Rd., Gangshan Dist., Kaohsiung City 82063, Taiwan
TEL 886-7-621-3121 FAX 886-7-621-3129 MAIL sales@panjit.com.tw
Product List
Performance
Series
BV
(V)
I
f
(A)
V
f Typ.
(V)
TO-252AA TO-263 TO-220AC TO-247AD-2LD TO-247AD-3LD
SiC Diode
650V
650
4 1.5
PCDD0465G1
PCDC0465G1*
PCDB0465G1
PCDE0465G1*
PCDP0465G1
6 1.5
PCDD0665G1
PCDC0665G1*
PCDB0665G1
PCDE0665G1*
PCDP0665G1
8 1.5
PCDD0865G1
PCDC0865G1*
PCDB0865G1
PCDE0865G1*
PCDP0865G1
10 1.5
PCDD1065G1
PCDC1065G1*
PCDB1065G1
PCDE1065G1*
PCDP1065G1
12 1.5
PCDP1265G1
16 1.5
PCDP1665G1
20 1.5
PCDP2065G1
PCDH2065CCG1
PCDH2065CCG1-AU
30 1.5
PCDH3065CCG1
PCDH3065CCG1-AU
40 1.5
PCDH4065CCG1
PCDH4065CCG1-AU
SiC Diode
1200V
1200
5 1.5
PCDD05120G1
PCDC05120G1*
PCDP05120G1
8 1.5
PCDD08120G1
PCDC08120G1*
PCDP08120G1
10 1.5
PCDD10120G1
PCDC10120G1*
PCDB10120G1
PCDE10120G1*
PCDP10120G1
15 1.5
PCDP15120G1
20 1.5
PCDB20120G1
PCDE20120G1*
PCDP20120G1 PCDH20120G1
PCDH20120CCG1
PCDH20120CCG1-AU
30 1.5
PCDH30120CCG1
PCDH30120CCG1-AU
40 1.5
PCDH40120CCG1
PCDH40120CCG1-AU
* NC 1 Pin
System Evaluation:
800W CCM Boost PFC, Vin = 110Vac/60Hz, Vout = 400V, Fsw = 65kHz
System Evaluation:
1.2 kW Vienna PFC, Vin = 120Vac/60Hz, Vout = 600V, Fsw = 50kHz
SiC Diode 1200V / 10A
SiC Diode 650V / 10A