V25PN60 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.25 V at IF = 5 A
●FEATURES
■ Very low profile - typical height of 1.1 mm
■ Ideal for automated placement
■ Trench MOS Schottky technology
■ Low forward voltage drop, low power losses
■ High efficiency operation
■ Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
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V25PN60 、 TMBS® 、 eSMP® 、 V25PN60-M3/86A 、 V25PN60-M3/87A |
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Schottky Rectifier 、 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier |
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[ low voltage high frequency DC/DC converters ][ freewheeling ][ polarity protection ] |
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Datasheet |
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Please see the document for details |
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TO-277A |
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English Chinese Chinese and English Japanese |
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27-Oct-14 |
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Revision: 27-Oct-14 |
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87718 |
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143 KB |
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