CHA8254-99F 10W K-Band DohertyPower Amplifier: GaN Monolithic Microwave IC
■The CHA8254-99F is a three-stage GaN Doherty Power Amplifier in the frequency band 17.3-20.3GHz. This DPA typically provides 10W of output power associated to 31% of Power Added Efficiency. Thanks to Doherty architecture, it also provides 27% Power Added Efficiency at 6dB of input back-off . The small signal gain reaches more than 29dB. The overall power supply is 15V/225mA (quiescent current). Thanks to a low drain voltage biasing, the CHA8254-99F provides a junction temperature below 160°C even in saturation.This circuit is a very versatile amplifier for high performance systems.
■The circuit is firstly dedicated to space applications and well suited for a wide range of microwave applications and systems.
■The part is developed on a robust 0.15μm gate length GaN on SiC HEMT process and is available as a bare die.
●Main Features
■17.3-20.3 GHz frequency range
■Linear Gain is 29dB
■40dBm Pout for +20dBm input power
■Associated PAE is more than 31% for +20dBm input power and 27% for +14dBm input power
■DC bias: Vd=15Volts @Idq_main=210mA @Idq_peak=15mA
■Chip size : 5x3.6x0.07mm
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10W K-Band DohertyPower Amplifier 、 three-stage GaN Doherty Power Amplifier 、 GaN Monolithic Microwave IC |
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[ space applications ][ microwave applications ][ microwave systems ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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20 Oct 22 |
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DSCHA82542293 |
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2.2 MB |
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