SSS3N80/70 N-CHANNEL POWER MOSFETS
■Lower R-DS(ON)
■Improved inductive ruggedness
■Fast switching times
■Rugged polysilicon gate cell structure
■Lower input capacitance
■Extended safe operating area
■Improved high temperature reliability
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Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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2000/12/18 |
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597 KB |
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