FQA13N80 800V N-Channel MOSFET
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
■Features
●12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
●Low gate charge ( typical 68 nC)
●Low Crss ( typical 30 pF)
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
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Please see the document for details |
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TO-3P |
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English Chinese Chinese and English Japanese |
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2006/4/22 |
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785 KB |
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