SSP3N80A Advanced Power MOSFET
■Avalanche Rugged Technology
■Rugged Gate Oxide Technology
■Lower Input Capacitance
■Improved Gate Charge
■Extended Safe Operating Area
■Lower Leakage Current : 25 μA (Max.) @ V-DS = 800V
■Low R-DS(ON) : 3.800 Ω (Typ.)
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2013/12/26 |
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337 KB |
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