FQP3N80C/FQPF3N80C 800V N-Channel MOSFET
planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
●Features
■3.0A, 800V, R-DS(on) = 4.8Ω @V-GS = 10 V
■Low gate charge ( typical 13 nC)
■Low Crss ( typical 5.5 pF)
■ Fast switching
■ 100% avalanche tested
■Improved dv/dt capability
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FQP Series 、 FQP 、 FQPF Series 、 FQPF 、 FQP3N80C 、 FQPF3N80C |
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N-Channel MOSFET 、 N-Channel enhancement mode power field effect transistors |
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Datasheet |
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Please see the document for details |
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TO-220;TO-220F |
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English Chinese Chinese and English Japanese |
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2013/12/26 |
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871 KB |
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