FQP3N80 800V N-Channel MOSFET
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
●Features
■3.0A, 800V, R-DS(on) = 5.0Ω @V-GS = 10 V
■ Low gate charge ( typical 15 nC)
■ Low Crss ( typical 7.0 pF)
■ Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability
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FQP Series 、 FQP 、 FQP3N80 |
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N-Channel MOSFET 、 N-Channel enhancement mode power field effect transistors |
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2013/12/26 |
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704 KB |
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