AP15N10Y 100V N-Channel Enhancement Mode MOSFET
●The AP15N10Y uses advanced trench technology to provide excellent R-DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
■General Features
●V-DS= 100V, I-D=14.1A
●R-DS(ON)< 105mΩV-GS=10V
|
[ Load Switch ][ PWM Application ][ Power management ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TO-251-3L |
|
|
English Chinese Chinese and English Japanese |
|
|
2020/04/1 |
|
|
REV1.0 |
|
|
|
|
|
2.9 MB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
