MAP15N10D 100V N-Channel Enhancement Mode MOSFET

PublishTime：2021-06-08

The MAP15N10D uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features：
■V-DS=100V,I-D=15A
■R-DS(ON)<90mΩ@ V-GS=10V
■R-DS(ON)<100mΩ@ V-GS=4.5V
■Super high density cell design for extremely low
■R-DS(ON) Exceptional on-resistance and maximum DC current

Brand of Product：	Maximum
Part#：	MAP15N10D More Part#
Product Category：	100V N-Channel Enhancement Mode MOSFET More
Application：	[ Power switching application ][ Hard Switched Circuits ][ High Frequency Circuits ][ Uninterruptible Power Supply ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-252
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/05/25
Version Number：
Data Encoding：
Data Size：	997 KB

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