HM15N10D N-Channel Enhancement Mode Power MOSFET
●General Features:
■V-DS=100V,I-D=15A
■R-DS(ON)<31mΩ @ V-GS=10V (Typ:27mΩ)
■Special process technology for high ESD capability
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation
[ Power switching application ][ Hard switched ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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DFN5X6-8L |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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v1.0 |
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779 KB |
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