HM15N10D N-Channel Enhancement Mode Power MOSFET

2021-07-09
●Description: The HM15N10D uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features:
■V-DS=100V,I-D=15A
■R-DS(ON)<31mΩ @ V-GS=10V (Typ:27mΩ)
■Special process technology for high ESD capability
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation

H&M SEMI

HM15N10D

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N-Channel Enhancement Mode Power MOSFET

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Power switching application ]Hard switched ]high frequency circuits ]Uninterruptible power supply ]

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DFN5X6-8L

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2021/03/01

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