HM15N10D N-Channel Enhancement Mode Power MOSFET

PublishTime：2023-03-22

●Description
■The HM15N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS = 100V, ID =15A
▲RDS(ON) < 31mΩ @ VGS=10V (Typ:27mΩ)
■Special process technology for high ESD capability
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation

Brand of Product：	Hongmei Power Semiconductor
Part#：	HM15N10D More Part#
Product Category：	N-Channel Enhancement Mode Power MOSFET More
Application：	[ Uninterruptible power supply ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFN5X6-8L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2022/11/7
Version Number：	v1.0
Data Encoding：
Data Size：	747 KB

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