AP15N10D 100V N-Channel Enhancement Mode MOSFET
●The AP15N10D uses advanced trench technology to provide excellent R-DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
■General Features
●V-DS =100V,I-D =19.3A
●R-DS(ON) <85mΩ@ V-GS=10V (Type：65mΩ)
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[ Lithium battery protection ][ Wireless impact ][ Mobile phone fast charging ] |
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Datasheet |
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Please see the document for details |
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TO-252-3L |
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English Chinese Chinese and English Japanese |
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2021/1/3 |
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REV3.1 |
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1.6 MB |
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