AP15N10D-L 100V N-Channel Enhancement Mode MOSFET
●The AP15N10D-L uses advanced trench technology to provide excellent R-DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
■General Features
●V-DS= 100V, I-D=14.1A
●R-DS(ON)< 105mΩV-GS=10V
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[ Load Switch ][ PWM Application ][ Power management ] |
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Datasheet |
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Please see the document for details |
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TO-252-3L |
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English Chinese Chinese and English Japanese |
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2019/12/01 |
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Rev3.9 |
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2.1 MB |
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