MAP15N10S 100V N-Channel Enhancement Mode MOSFET

PublishTime：2021-06-08

The MAP15N10S uses advanced trench technology to provide excellent R-DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other application.
●General Features：
■V-DS =100V,I-D =15A
■R-DS(ON) <100mΩ @ V-GS=10V
R-DS(ON) <110mΩ @ V-GS=10V

Brand of Product：	Maximum
Part#：	MAP15N10S More Part#
Product Category：	100V N-Channel Enhancement Mode MOSFET More
Application：	[ Power switching application ][ Hard Switched Circuits ][ High Frequency Circuits ][ Uninterruptible Power Supply ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOP-8
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/05/25
Version Number：
Data Encoding：
Data Size：	1.1 MB

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