AN1009: Driving MOSFET and IGBT Switches Using the Si828x

2020-11-19

The Si828x products integrate isolation, gate drivers, fault detection protection, and operational indicators into one package to drive IGBTs and MOSFETs as well as other gated power switch devices. Most Si828x products (except the Si8286) have three separate output pins to provide independent rise and fall time settings and low impedance clamping to suppress Miller voltage spikes. This application note provides guidance for selecting the external components necessary for operation of the driver. Although this application note discusses the topic of driving IGBTs and MOSFETs, users can apply the same concepts for driving other gate-based power switches, such as SiC (Silicon Carbide).
The figure below depicts an isolated gate drive circuit with three output pins for driving the gate of the IGBT. Input signals from the IN+ pin are RF encoded to transmit across the isolation barrier, and the RF signal is decoded back to its original signal format on the secondary side to connect to the driver input. The driver has three output pins. The VH pin provides positive drive current to turn the IGBT on while the VL pin provides sinking current to turn the IGBT off. The VH and VL pins are connected to the gate of the IGBT through the RH and RL resistors. The CLMP pin is connected to the gate of the IGBT directly to provide a low-impedance clamp between the IGBT Gate and Source terminals during the off time. This low-impedance CLMP connection prevents the high Miller current from generating voltage spikes that might be higher than Vth and turn the IGBT on during the off period. The following sections will explain the operation of the gate drive circuits in more detail.
KEY FEATURES:
• Simple Driver with One Output.
• Driver with Independent Rise and Fall.
•Driver with Miller Clamp.
• Driver Power Dissipation.
• Gate Resistor Calculations.
• DESAT Detection and Protection.
• Half-Bridge Shoot-Through Current.
• Example Design.

Silicon Labs

Si828xSi8286Si8285Si8287Si8281Si8284Si8285ASi8285B

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Application note & Design Guide

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English Chinese Chinese and English Japanese

2017/07/27

Rev.0.1

AN1009

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