UG484: Si828x-HB-EVB User’s Guide
2021-06-23
●The Si828x-HB-EVB (Si828x Half-Bridge EVB) is a versatile platform for demonstrating the features of the Si828x with SiC/IGBTdevices in a half-bridge circuit configuration. The board includes the Si8285 to drive the high-side switch and an Si8284 to drive the low-side switch
●The Si8284 has an integrated dc-dc circuit that operates with an external MOSFET and a transformer to generate two pairs of isolated positive and negative voltages to power both the Si8285 and the Si8284.
●The Si828x-HB-EVB has a “non-overlap” circuit to take PWM signal input from a single-channel function generator to produce complimentary PWM signals with programable dead time control to drive the inputs of the Si8285 and Si8284 gate drivers. The input circuit can also be configured to operate with two channel function generators to drive the input of the Si8285 and Si8284 directly.
●There are terminals on the outputs of the half-bridge power circuit that can be arranged to support double pulse (switching loss), crosstalk, and Si828x DESAT short circuit protection tests. Also, the board can be configured to operate with an external inductor (not included) in half-bridge buck or boost operation for dv/dt and dc-dc efficiency testing.
●The board has connections for current and voltage probes to support data collection during tests. Operating the board is simple with the assistance of the LED indicators(RDY, /FLT), current sensor (not included), voltage measurement (BNC, SMA) connectors, and the /FLT reset button.
●KEY FEATURES:
■Half-bridge demonstration board for SiC/IGBT
■Operates up to 1 kV DC-Rail input
■Demonstrates half-bridge operations(double pulse, buck, boost)
■Demonstrates desaturation protection
■Demonstrates adjustable soft shutdown capability
■Onboard “non-overlap” circuit to convert single PWM signal into complementary signals with independent adjustable deadtime
■Demonstrates Si8284 integrated dc-dc to generate all necessary voltages to power both high- and low-side gate drivers
■Supports IGBT/SiC in TO-247 packages in standard 3-pin and 4-pin configurations with Kelvin Source connection
■Supports gate current booster option
●The Si8284 has an integrated dc-dc circuit that operates with an external MOSFET and a transformer to generate two pairs of isolated positive and negative voltages to power both the Si8285 and the Si8284.
●The Si828x-HB-EVB has a “non-overlap” circuit to take PWM signal input from a single-channel function generator to produce complimentary PWM signals with programable dead time control to drive the inputs of the Si8285 and Si8284 gate drivers. The input circuit can also be configured to operate with two channel function generators to drive the input of the Si8285 and Si8284 directly.
●There are terminals on the outputs of the half-bridge power circuit that can be arranged to support double pulse (switching loss), crosstalk, and Si828x DESAT short circuit protection tests. Also, the board can be configured to operate with an external inductor (not included) in half-bridge buck or boost operation for dv/dt and dc-dc efficiency testing.
●The board has connections for current and voltage probes to support data collection during tests. Operating the board is simple with the assistance of the LED indicators(RDY, /FLT), current sensor (not included), voltage measurement (BNC, SMA) connectors, and the /FLT reset button.
●KEY FEATURES:
■Half-bridge demonstration board for SiC/IGBT
■Operates up to 1 kV DC-Rail input
■Demonstrates half-bridge operations(double pulse, buck, boost)
■Demonstrates desaturation protection
■Demonstrates adjustable soft shutdown capability
■Onboard “non-overlap” circuit to convert single PWM signal into complementary signals with independent adjustable deadtime
■Demonstrates Si8284 integrated dc-dc to generate all necessary voltages to power both high- and low-side gate drivers
■Supports IGBT/SiC in TO-247 packages in standard 3-pin and 4-pin configurations with Kelvin Source connection
■Supports gate current booster option
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