AN1288: Si828x External Enhancement Circuits

2021-05-08
The Si828x isolated gate drivers fulfill the demands of many high voltage power applications. The Si828x have robust gate drive capability and protection circuits that maximize system efficiency and ensure reliable operation.
For larger systems that require very large or multiple parallel switching devices and for systems (such as SiC FET) that operate at a high switching speed, additional circuits comprised of low-cost external components can extend the Si828x capabilities many ways. For example, it is possible to increase the effective output current to drive larger SiC FET/IGBT modules or to adapt the Si828x to drive and protect higher switching speed SiC FET devices.
This application note discusses circuit enhancements and their associated performance improvements, including a current drive booster which will increase gate current drive above 20 A, circuitry for reducing DESAT protection response time below 1 μs while maintaining robust noise immunity, a DESAT threshold adjustment which enables a threshold below the nominal 7 V, a method of adjusting the soft shutdown time in the event of a fault, and an external enhancement of the internal Miller clamp, improving the suppression of the Miller spike which can occur when the external transistor is turned off.
●KEY FEATURES:
■Current drive above 20 A
■DESAT protection response time < 1 μs
■DESAT threshold adjustment
■Adjustable soft shutdown current to minimize VDS voltage spikes or to minimize shutoff time
■External Miller clamp
The Si828x family (Si8281/82/83/84/85/86) is made up of isolated, high-current gate drivers with integrated system safety and feedbackfunctions. These devices are ideal for driving power SiC FETs and IGBTs used in a wide variety of inverter and motor control applica-tions. A dedicated DSAT pin detects the desaturation condition and immediately shuts down the driver in a controlled manner. The Si828x devices also integrate a Miller clamp and negative VSSB to secure the power switch in the off state.

Silicon Labs

Si828xSi8281Si8282Si8283Si8284Si8285Si8286

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External Enhancement Circuitsisolated gate driversDE-SAT protection circuitgate drive circuit

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Application note & Design Guide

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SOT223;SOT669;LFPAK56;DPAK;SOT89

English Chinese Chinese and English Japanese

2021/01/21

Rev. 0.1

AN1288

1.5 MB

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