Test Report: Driving Cree® C3M™SiC MOSFETs with Silicon Labs® Si828x Gate Drivers in applications requiring short-circuit protection

2021-06-23
●The main purpose of this test report prepared jointly by Cree (through its Wolf speed business division) and Silicon Labs is to document the results of testing performed to characterize the short circuit behavior of Cree® C3M™ Silicon Carbide (SiC) MOSFETs when driven with Silicon Labs® Si828x gate drivers. It demonstrates the fast short-circuit detection of the driver IC coupled with the robustness of the SiC MOSFET design allowing the system to survive extreme short-circuit conditions.
●While the short-circuit protection is the main subject of this report, the overall performance of the gate driver including common mode transient immunity (CMTI) and cross-talk (or Miller) immunity in a hard-switched synchronous boost application were evaluated as well.
●This document may be used to assess the feasibility of new designs using Cree C3M SiC MOSFETs with Silicon Labs Si828x gate driversin hard-switched applications requiring short-circuit protection.The specific Silicon Labs drivers evaluated in this test were Si8281 and Si8285 but all of their Si828x drivers offer the same short-circuit protection and CMTI capabilities

Silicon Labs

Si828xSi8281Si8285C3M00651000KSi8285CC-ISSi8281CC-ISC3M0016120KC3M0065100K

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Part#

Gate Drivers

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short-circuit protection ]

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Test Report

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2021-01-08

Rev 1

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