10W K-Band Doherty Power Amplifier: GaN Monolithic Microwave IC
●This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to space applications and also well suited for a wide range of microwave applications and systems.
●The part is developed on a robust 0.15μm gate length GaN-on-SiC HEMT process and is available as a bare die.
K-Band Doherty Power Amplifier 、 GaN Monolithic Microwave IC 、 three-stage GaN Doherty Power Amplifier 、 very versatile amplifier |
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[ high performance systems ][ microwave applications ][ microwave systems ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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14 Apr 22 |
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AI2203 |
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2.1 MB |
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