10W K-Band Doherty Power Amplifier GaN Monolithic Microwave IC Advanced Information
●UMS develops the CHA8254-99F, a three-stage GaN Doherty Power Amplifier in the 17.3-20.3GHz frequency band. This DPA typically provides 10W of output power associated with 31% of Power Added Efficiency. Thanks to Doherty architecture, it also provides 27% Power Added Efficiency at 6dB of input back-off (around 3dB of output back-off). The small signal gain exhibits more than 29dB. The overall power supply is 15V/225mA (quiescent current). Thanks to a low drain voltage biasing, the CHA8254-99Fprovides a junction temperature below 160°C even in saturation.
●This circuit is a very versatile amplifier for high performance systems.
●The circuit is dedicated to space applications and also well suited for a wide range of microwave applications and systems.
●The part is developed on a robust 0.15μm gate length GaN-on-SiC HEMT process and is available as a bare die.
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K-Band Doherty Power Amplifier 、 GaN Monolithic Microwave IC 、 three-stage GaN Doherty Power Amplifier |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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14 Apr 22 |
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Al2203;AI22032104 |
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2.6 MB |
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