WLCSP Chips RoHS (SGS) Test Report (SHAEC2121998811)
■SGS Job No.: SP21-031842 - SUZ
■Model No.: WLCSP
■Date of Sample Received: 13 Oct 2021
■Testing Period: 13 Oct 2021 - 18 Oct 2021
■Test Requested: Selected test(s) as requested by client.
■Conclusion: Based on the performed tests on submitted sample(s), the results of Cadmium, Lead, Mercury, Hexavalent chromium, Polybrominated biphenyls (PBBs), Polybrominated diphenyl ethers (PBDEs) and Phthalates such as Bis(2-ethylhexyl) phthalate (DEHP), Butyl benzyl phthalate (BBP), Dibutyl phthalate (DBP) and Diisobutyl phthalate (DIBP) comply with the limits as set by RoHS Directive (EU) 2015/863 amending Annex II to Directive 2011/65/EU.
|
|
Test Report |
|
|
|
Please see the document for details |
|
|
|
|
|
WLCSP |
|
English Chinese Chinese and English Japanese |
|
18 Oct 2021 |
|
|
|
SHAEC2121998811 |
|
831 KB |
- +1 Like
- Add to Favorites
Recommend
- 蓝牙SOC芯片是无线通信技术的核心力量
- [经验]瑞萨32位MCU RA2E1如何利用FSP工具生成sci_uart的配置代码
- [应用]25A/40V德欧泰克SBX2540-3G太阳能旁路二极管用于光伏电池板,泄漏电流低仅200μA
- HSA6880 Single Channel Isolated Gate Driver with Protection Features
- 200V/60A Power MOSFET BLM30N20, Uses Advanced Trench Technology and Design to Provide Excellent RDS(ON) with Low Gate Charge
- -40V/-5A Power MOSFET BLM80P04, Using Advanced Trench Technology and Design to Provide Excellent RDS(ON) with Low Gate Charge
- 100V/120A N-channel Enhanced Power MOSFET BLP042N10G, Featuring Fast Switching, Low On-Resistance, Low Gate Charge and Low Reverse transfer capacitances
- 60V/6A Power MOSFET BLM30DN06L, Uses Advanced Trench Technology and Design to Provide Excellent RDS(ON) with Low Gate Charge
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.