High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
●TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
●FEATURES
■Package type: leaded
■Package form: T-1¾
■Dimensions (in mm): Ø 5
■Peak wavelength: λ-p = 850 nm
■ High reliability
■ High radiant power
■ High radiant intensity
■ Angle of half intensity: ϕ = ± 10°
■ Low forward voltage
■ Suitable for high pulse current operation
■High modulation bandwidth: f-c = 18 MHz
■ Good spectral matching with CMOS cameras
■Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
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High Speed Infrared Emitting Diode 、 infrared, 850 nm emitting diode |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2011/08/24 |
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Rev. 1.8 |
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81078 |
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251 KB |
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