TP65H150G4PS 650V SuperGaN® GaN FET in TO-220 (source tab) Preliminary Datasheet

2021-12-08
■Description:
● The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
●The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
■Features :
●AEC-Q101 qualified GaN technology
●Dynamic R-DS(on)eff production tested
●Robust design, defined by
◆Wide gate safety margin
◆Transient over-voltage capability
●Enhanced inrush current capability
●Very low Q-RR
●Reduced crossover loss
●RoHS compliant and Halogen-free packaging

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TP65H150G4PS

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SuperGaN® GaN FET

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Consumer ]Power adapters ]Low power SMPS ]Lighting ]

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Datasheet

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TO-220

English Chinese Chinese and English Japanese

Jun. 2, 2021

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