Jun. 2, 2021 © 2019 Transphorm Inc. Subject to change without notice.
tp65h150g4PS.0v1 1
TP65H150G4PS
650V SuperGaN
®
GaN FET in TO-220 (source tab) Preliminary Datasheet
Key Specifications
V
DS
(V) min 650
V
DSS(TR)
(V) max 800
R
DS(on)
(mΩ) max* 180
Q
RR
(nC) typ 40
* Dynamic R
DS(on)
; see Figures 18 and 19
Q
G
(nC) typ 8
Features
Gen IV technology
JEDEC-qualified GaN technology
Dynamic R
DS(on)eff
production tested
Robust design, defined by
— Wide gate safety margin
— Transient over-voltage capability
Very low Q
RR
Reduced crossover loss
RoHS compliant and Halogen-free packaging
Benefits
Achieves increased efficiency in both hard- and soft-
switched circuits
— Increased power density
— Reduced system size and weight
— Overall lower system cost
Easy to drive with commonly-used gate drivers
GSD pin layout improves high speed design
Applications
Consumer
Power adapters
Low power SMPS
Lighting
Description
The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN)
FET is a normally-off device. It combines state-of-the-art high
voltage GaN HEMT and low voltage silicon MOSFET
technologies—offering superior reliability and performance.
The Gen IV SuperGaN
®
platform uses advanced epi and
patented design technologies to simplify manufacturability
while improving efficiency over silicon via lower gate charge,
output capacitance, crossover loss, and reverse recovery
charge.
Related Literature
AN0003: Printed Circuit Board Layout and Probing
AN0007: Recommendations for Vapor Phase Reflow
AN0009: Recommended External Circuitry for GaN FETs
AN0012: PQFN Tape and Reel Information
Product Series and Ordering Information
Part Number Package
Package
Configuration
TP65H150G4PS 3 lead TO-220 Source
Cascode Device Structure Cascode Schematic Symbol
S
G
D
S
TP65H0150G4PS
TO-220
(top view)