TP65H150G4LSG 650V SuperGaN®GaN FET in PQFN (source tab) Preliminary Datasheet
● The TP65H150G4LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
●The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
■Features :
●Gen IV technology
●JEDEC-qualified GaN technology
●Dynamic R-DS(on)eff production tested
●Robust design, defined by
◆Wide gate safety margin
◆Transient over-voltage capability
●Very low Q-RR
●Reduced crossover loss
●RoHS compliant and Halogen-free packaging
[ Consumer ][ Power adapters ][ Low power SMPS ][ Lighting ] |
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Datasheet |
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Please see the document for details |
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PQFN |
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English Chinese Chinese and English Japanese |
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Jun. 2, 2021 |
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Version 0.2 |
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tp65h150g4lsg.0v2 |
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1.1 MB |
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