SL17N06D N-Channel Power MOSFET
■V-DS =60V,I-D =17A
▲R-DS(ON) <75 mΩ @ V-GS=10V
▲R-DS(ON <90 mΩ @ V-GS=4.5V
■Improved dv/dt capability
■High density cell design for ultra low Rdson
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation
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[ Power switchingapplication ][ Hards witched and high frequency circuits ][ Moto rdrive ] |
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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650 KB |
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