EPC2152 Enhancement-Mode Gallium Nitride Technology
2023-08-03
●Enhancement-Mode Gallium Nitride (eGaN®) Transistors and Integrated Circuits
■A GaN transistor is a wide bandgap device with superior conductivity compared to traditional silicon transistors resulting in smaller devices and lower capacitance for the same R-DS(on).
■Enhancement-mode (normally-off) operation allows power designers to take advantage of the performance benefits of gallium nitride in a switching application.
■Capacitance and inductance impede switching speed. eGaN FETs’ small size and lateral structure give ultra low capacitance while the chip-scale packaging gives low inductance enabling unprecedented switching performance in terms of speed, voltage overshoot and ringing. Zero QRR also reduces losses at high frequency.
■The switching performance of eGaN FETs and ICs enables higher power density, higher frequency, higher switching precision, higher bus voltage, and less voltage overhead. The technology can be scaled over many power and voltage levels.
■A GaN transistor is a wide bandgap device with superior conductivity compared to traditional silicon transistors resulting in smaller devices and lower capacitance for the same R-DS(on).
■Enhancement-mode (normally-off) operation allows power designers to take advantage of the performance benefits of gallium nitride in a switching application.
■Capacitance and inductance impede switching speed. eGaN FETs’ small size and lateral structure give ultra low capacitance while the chip-scale packaging gives low inductance enabling unprecedented switching performance in terms of speed, voltage overshoot and ringing. Zero QRR also reduces losses at high frequency.
■The switching performance of eGaN FETs and ICs enables higher power density, higher frequency, higher switching precision, higher bus voltage, and less voltage overhead. The technology can be scaled over many power and voltage levels.
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