EPC2152 80 V, 15 A ePower™ Stage Preliminary Datasheet
●Features
■Separate and independent high side and low side control inputs
■Input signal compatible with 3.3 V or 5 V CMOS logic levels
■Tuned 1 to 2 ns switching time
■Controlled over-voltage spike at switching node
■Robust level shifter operating for hard and soft switching conditions
■False trigger immunity from fast switching transients at driven phase as well as from coupling phases
■Synchronous charging for high side bootstrap supply
■Internally regulated gate drive voltage level to drive output FETs
■Undervoltage lockout for high side and low side power supplies
single chip driver plus eGaN® FET half-bridge power stage IC |
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Datasheet |
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Please see the document for details |
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LGA |
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English Chinese Chinese and English Japanese |
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March 2021 |
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Revision 2.0 |
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2.3 MB |
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