UF3N170400B7S 1700V-400mW SiC Normally-on JFET DATASHEET
■UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
●Features
■Typical on-resistance R-DS(on),typ of 400mW
■Voltage controlled
■Maximum operating temperature of 175°C
■Extremely fast switching not dependent on temperature
■Low gate charge
■Low intrinsic capacitance
■RoHS compliant
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[ Over Current Protection Circuits ][ DC-AC Inverters ][ Switch mode power supplies ][ Power factor correction modules ][ Motor drives ][ Induction heating ] |
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Datasheet |
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Please see the document for details |
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D²PAK-7L |
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English Chinese Chinese and English Japanese |
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September 2021 |
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Rev. A |
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875 KB |
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