DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
■This new generation MOSFET is designed to minimize the on-state resistance (R-DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
●Features
■Dual N-Channel MOSFET
■Low On-Resistance:
▲3.0Ω @ 4.5V
▲4.0Ω @ 2.5V
▲6.0Ω @ 1.8V
▲10Ω @ 1.5V
■Very Low Gate Threshold Voltage, 1.05V Max
■Low Input Capacitance
■Fast Switching Speed
■Ultra-Small Surface Mount Package
■ESD Protected Gate (HBM 300V)
■Totally Lead-Free &Fully RoHS Compliant (Notes 1 & 2)
■Halogen and Antimony Free. “Green” Device (Note 3)
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[ high efficiency power management ][ DC-DC Converters ][ Power Management Functions ] |
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Datasheet |
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Please see the document for details |
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SOT963 |
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English Chinese Chinese and English Japanese |
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December 2014 |
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Rev.9-2 |
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DS31481 |
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325 KB |
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