HM7N65K / HM7N65I 650V N-Channel MOSFET
●This Power MOSFET is produced using SL semi's advanced planar stripe DMOS technology.This advanced technology has been especially tailored to minimize on-state r esistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction based on half bridge topology
■General Features
● 7.0A, 650V, RDS(on) = 1.35Ω @VGS = 10 V
● Low gate charge ( typical 29nC)
● High ruggedness
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
[ high efficiency switched ][ active power factor correction ] |
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Datasheet |
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Please see the document for details |
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TO-252;TO-251 |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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501 KB |
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